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PD - 95662
IRFP17N50LPBF
HEXFET(R) Power MOSFET Applications * Zero Voltage Switching SMPS VDSS RDS(on) typ. Trr typ. ID * Telecom and Server Power Supplies * Uninterruptible Power Supplies 0.28 500V 170ns 16A * Motor Control applications * Lead-Free Features and Benefits * SuperFast body diode eliminates the need for external diodes in ZVS applications. * Lower Gate charge results in simpler drive requirements. * Enhanced dv/dt capabilities offer improved ruggedness. * Higher Gate voltage threshold offers improved noise TO-247AC immunity. Absolute Maximum Ratings
Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V ID @ TC = 100C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current Max. 16 11 64 220 1.8 30 13 -55 to + 150 W W/C V V/ns C 300 (1.6mm from case ) 10lbxin (1.1Nxm) A Units
SMPS MOSFET
PD @TC = 25C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and
e
Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
IS ISM VSD trr Qrr IRRM ton
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- --- --- --- 170 220 470 7.3 16 A 64 1.5 250 330 710 11 nC A V ns
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 16A, VGS = 0V TJ = 25C, IF = 16A TJ = 125C, di/dt = 100A/s TJ = 125C, di/dt = 100A/s TJ = 25C
f f
f f
TJ = 25C, IS = 16A, VGS = 0V
810 1210
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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07/30/04
IRFP17N50LPBF
Static @ TJ = 25C (unless otherwise specified)
Symbol
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS RG
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance
Min. Typ. Max. Units
500 --- --- 3.0 --- --- --- --- --- --- 0.60 0.28 --- --- --- --- --- 1.4 --- --- 0.32 5.0 50 2.0 100 -100 --- V V A mA nA
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 9.9A
V/C Reference to 25C, I D = 1mA
f
VDS = VGS, ID = 250A VDS = 500V, VGS = 0V VDS = 400V, VGS = 0V, TJ = 125C VGS = 30V VGS = -30V f = 1MHz, open drain
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Coss eff. (ER)
Parameter
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Effective Output Capacitance (Energy Related)
Min. Typ. Max. Units
11 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 21 51 50 28 2760 325 37 3690 84 159 120 --- 130 33 59 --- --- --- --- --- --- --- --- --- --- --- pF ns nC S ID = 16A
Conditions
VDS = 50V, ID = 9.9A VDS = 400V VGS = 10V, See Fig. 7 & 15 VDD = 250V ID = 16A RG = 7.5 VGS = 10V, See Fig. 14a & 14b VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 400V, = 1.0MHz VGS = 0V,VDS = 0V to 400V
f f
g
Avalanche Characteristics
Symbol
EAS IAR EAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentA Repetitive Avalanche Energy Typ. --- --- --- Max. 390 16 22 Units mJ A mJ
Thermal Resistance
Symbol
RJC RCS RJA
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
0.56 --- 62
Units
C/W
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11) Starting TJ = 25C, L = 3.0mH, RG = 25, IAS = 16A. (See Figure 12). ISD = 16A, di/dt 347A/s, VDD V(BR)DSS, TJ 150C.
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS . Coss eff.(ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80% VDSS.
2
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IRFP17N50LPBF
100
VGS TOP 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V
100
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
1
5.0V
5.0V
0.1
1
20s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100 0.1 0.1 1
20s PULSE WIDTH Tj = 150C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
I D , Drain-to-Source Current (A)
TJ = 150 C
RDS(on) , Drain-to-Source On Resistance (Normalized)
100
3.0
ID = 16A
2.5
10
2.0
TJ = 25 C
1.5
1
1.0
0.5
0.1 4.0
V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFP17N50LPBF
100000
20
VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
10000
15
C, Capacitance(pF)
Ciss
1000
Energy (J)
10
Coss
100
5
Crss
10 1 10 100 1000
0 0 100 200 300 400 500 600
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typ. Output Capacitance Stored Energy vs. VDS
20
ID = 16A V DS= 400V V DS= 250V V DS= 100V
100
VGS , Gate-to-Source Voltage (V)
ISD , Reverse Drain Current (A)
16
TJ = 150 C
10
12
TJ = 25 C
1
8
4
0
0
30
60
90
120
150
0.1 0.2
V GS = 0 V
0.6 0.9 1.3 1.6
QG , Total Gate Charge (nC)
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 8. Typical Source-Drain Diode Forward Voltage
4
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IRFP17N50LPBF
20
VDS V GS
RD
16
ID , Drain Current (A)
RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
- VDD
12
8
Fig 10a. Switching Time Test Circuit
4
VDS 90%
0
25
50
75
100
125
150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response(Z thJC )
D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
PDM t1 t2 Notes: 1. Duty factor D =t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC
0.01
0.001 0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP17N50LPBF
EAS , Single Pulse Avalanche Energy (mJ)
1000
800
OPERATION IN THIS AREA LIMITED BY RDS(on)
640
ID 7A 10A BOTTOM 16A TOP
ID , Drain Current (A)
100 10us 10 100us 1ms 1 10ms
480
320
160
0.1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000 10000
0
25
50
75
100
125
150
VDS , Drain-to-Source Voltage (V)
Starting T J , Junction Temperature ( C)
Fig 12. Maximum Safe Operating Area
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
V(BR)DSS
VDS L
DRIVER
tp
RG
20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 14a. Unclamped Inductive Test Circuit
Current Regulator Same Type as D.U.T.
Fig 14b. Unclamped Inductive Waveforms
50K 12V .2F .3F
QG
VGS
D.U.T. + V - DS
QGS VG
QGD
VGS
3mA
IG
ID
Current Sampling Resistors
Charge
Fig 15a. Gate Charge Test Circuit
Fig 15b. Basic Gate Charge Waveform
6
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IRFP17N50LPBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 16. For N-Channel HEXFET(R) Power MOSFETs
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IRFP17N50LPBF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position indicates "Lead-Free"
PART NUMBER INT ERNATIONAL RECTIF IER LOGO AS SEMBLY LOT CODE
IRFPE30
56 035H 57
DATE CODE YEAR 0 = 2000 WEEK 35 LINE H
Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04
8
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